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KTH Royal Institute of Technology
Third-cycle subject: Information and Communication Technology The position will contribute to cutting-edge research on Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for next-generation power electronics applications. These devices are crucial for improving energy efficiency, performance, and reliability in industries such as renewable energy, electric veh…
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KTH Royal Institute of Technology
Location
🇸🇪 Stockholm Sweden
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Category
🎓PhDContract
Temporary position
Deadline
31 Aug 2026First seen
17 Jun 2026 (today)
Source
VARBI